FDS86252 N-Channel Power Trench® MOSFET
April 2011
FDS86252
N-Channel Power Trench® MOSFET
150 V, 4.5 A, 55 mΩ
Features
General Description
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely ...
