FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89141
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 3.5 A, 62 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A High performance trench technology for extr...
