Rectifier. FEP30FP-E3 Datasheet

FEP30FP-E3 Datasheet PDF


Part FEP30FP-E3
Description Dual Common Cathode Ultrafast Rectifier
Feature www.vishay.com FEP30xP-E3 Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier 3 .
Manufacture Vishay
Datasheet
Download FEP30FP-E3 Datasheet


www.vishay.com FEP30xP-E3 Vishay General Semiconductor Dua FEP30FP-E3 Datasheet




FEP30FP-E3
www.vishay.com
FEP30xP-E3
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
30 A
50 V, 100 V, 150 V, 200 V, 300 V,
400 V, 500 V, 600 V
IFSM
300 A
trr 35 ns, 50 ns
VF at IF = 15 A
0.95 V, 1.3 V, 1.5 V
TJ max.
Package
150 °C
TO-247AD (TO-3P)
Diode variations
Dual common cathode
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
Maximum repetitive peak reverse voltage
VRRM
50 100
Maximum RMS voltage
VRMS 35 70
Maximum DC blocking voltage
Maximum average forward rectified current
at TC = 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
VDC
IF(AV)
IFSM
50 100
Operating storage and temperature range
TJ, TSTG
FEP
30CP
150
105
150
FEP
30DP
200
140
200
FEP
30FP
300
210
300
30
300
-55 to +150
FEP
30GP
400
280
400
FEP
30HP
500
350
500
FEP
30JP
600
420
600
UNIT
V
V
V
A
A
°C/W
Revision: 23-Feb-16
1 Document Number: 88597
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



FEP30FP-E3
www.vishay.com
FEP30xP-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
Maximum instantaneous
forward voltage per diode
15.0 A
VF
0.95
1.3 1.5
Maximum DC reverse current at
rated DC blocking voltage
per diode
TC = 25 °C
TC = 100 °C
IR
10
500
Maximum reverse recovery time
per diode
Typical junction capacitance
per diode
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
4.0 V, 1 MHz
trr
CJ
35
175
50
145
UNIT
V
μA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
Typical thermal resistance per diode
RJC (1)
1.0
Note
(1) Thermal resistance from junction to case per diode mounted on heatsink
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
FEP30JP-E3/45
6.15
PACKAGE CODE
30
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
Revision: 23-Feb-16
2 Document Number: 88597
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)