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FGH12040WD IGBT Datasheet PDFIGBT IGBT |
| Part Number | FGH12040WD |
|---|---|
| Description | IGBT |
| Feature | IGBT - Field Stop, Trench
1200 V, 40 A
F GH12040WD
Description Using novel field stop IGBT technology, ON Semiconductor ’s new
series of field stop 2nd gener ation IGBTs offer the optimum performan ce for welder applications where low co nduction and switching losses are essen tial. Features • Maximum Junction Tem perature: TJ =175°C • Positive Tempe rature Co−efficient for Easy Parallel Operating • Low Saturation Voltage: VCE(sat) = 2. 3 V (Typ. ) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 1) • Short Circuit Ruggedness > 5 us @ 150°C • High Input Impedance • This Device is Pb−Free and is RoHS . |
| Manufacture | ON Semiconductor |
| Datasheet |
|
|
| Part Number | FGH12040WD |
|---|---|
| Description | IGBT |
| Feature | IGBT - Field Stop, Trench
1200 V, 40 A
F GH12040WD
Description Using novel field stop IGBT technology, ON Semiconductor ’s new
series of field stop 2nd gener ation IGBTs offer the optimum performan ce for welder applications where low co nduction and switching losses are essen tial. Features • Maximum Junction Tem perature: TJ =175°C • Positive Tempe rature Co−efficient for Easy Parallel Operating • Low Saturation Voltage: VCE(sat) = 2. 3 V (Typ. ) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 1) • Short Circuit Ruggedness > 5 us @ 150°C • High Input Impedance • This Device is Pb−Free and is RoHS . |
| Manufacture | ON Semiconductor |
| Datasheet |
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