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FGH40T65SHD IGBT Datasheet PDF

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Part Number FGH40T65SHD
Description IGBT
Feature FGH40T65SHD 650 V, 40 A Field Stop Trenc h IGBT FGH40T65SHD 650 V, 40 A Field S top Trench IGBT April 2015 Features Maximum Junction Temperature : TJ =1 75oC
• Positive Temperature Co-effici ent for Easy Parallel Operating
• Hig h Current Capability
• Low Saturation Voltage: VCE(sat) =1.
6 V(Typ.
) @ IC = 40 A
• 100% of the Parts Tested for I LM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distri bution
• RoHS Compliant General Desc ription Using novel field stop IGBT tec hnology, Fairchild’s new series of fi eld stop 3rd generation IGBTs offer the optimum performance for solar inv .
Manufacture Fairchild Semiconductor
Datasheet
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FGH40T65SHD

 

 

 


 

 

 

Part Number FGH40T65SHD
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65SHD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 3rd gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential.
Features
• Maximum Junction Temperature: TJ =175°C
• Positive T emperature Co−efficient for Easy Para llel Operating
• High Current Capabil ity
• Low Saturation Voltage: VCE(sat ) = 1.
6 V(Typ.
) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 1)
• High Input Impedance
• Fast Swi .
Manufacture ON Semiconductor
Datasheet
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