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FGH4L50T65MQDC50 IGBT Datasheet PDFN-Channel IGBT N-Channel IGBT |
　
　
　
| Part Number | FGH4L50T65MQDC50 |
|---|---|
| Description | N-Channel IGBT |
| Feature | IGBT - Power, Co-PAK N-Channel, Field St op IV, MQ (Medium Speed), TO247-4L
650 V, 1. 45 V, 50 A FGH4L50T65MQDC50 Usin g the novel field stop 4th generation I GBT technology and the 1. 5th generatio n SiC Schottky Diode technology in TO∠’247 4−lead package, FGH4L50T65MQDC5 0 offers the optimum performance with both low conduction and switching losse s for high−efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Fea tures • Positive Temperature Coeffic ient for Easy Parallel Operation • H igh Current Capability • 100% of the Parts are Tested for ILM . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | FGH4L50T65MQDC50 |
|---|---|
| Description | N-Channel IGBT |
| Feature | IGBT - Power, Co-PAK N-Channel, Field St op IV, MQ (Medium Speed), TO247-4L
650 V, 1. 45 V, 50 A FGH4L50T65MQDC50 Usin g the novel field stop 4th generation I GBT technology and the 1. 5th generatio n SiC Schottky Diode technology in TO∠’247 4−lead package, FGH4L50T65MQDC5 0 offers the optimum performance with both low conduction and switching losse s for high−efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Fea tures • Positive Temperature Coeffic ient for Easy Parallel Operation • H igh Current Capability • 100% of the Parts are Tested for ILM . |
| Manufacture | ON Semiconductor |
| Datasheet |
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