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FLL300IL-1 Fets Datasheet PDF(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| Part Number | FLL300IL-1 |
|---|---|
| Description | (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| Feature | www.DataSheet4U.com
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base st. |
| Manufacture | Fujitsu Microelectronics |
| Datasheet |
| Part Number | FLL300IL-1 |
|---|---|
| Description | (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| Feature | www.DataSheet4U.com
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base st. |
| Manufacture | Fujitsu Microelectronics |
| Datasheet |
| Part Number | FLL300IL-1 |
|---|---|
| Description | (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| Feature | www. DataSheet4U. com FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44. 5dBm (Typ. ) High Gain: G1dB = 12. 0dB (Typ. )@1. 8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ. ) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base st. |
| Manufacture | Fujitsu Microelectronics |
| Datasheet |
| Part Number | FLL300IL-1 |
|---|---|
| Description | (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| Feature | www. DataSheet4U. com FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44. 5dBm (Typ. ) High Gain: G1dB = 12. 0dB (Typ. )@1. 8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ. ) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base st. |
| Manufacture | Fujitsu Microelectronics |
| Datasheet |
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