FLM5964-4F
C-Band Internally Matched FET
FEATURES High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB =10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 5.9 to 6.4GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM5964-4F is a power GaAs FET that is internally matched for...