FNK N-Channel Enhancement Mode Power MOSFET
FNK08N03C
Description
TheFNK08N03C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V
(Typ:5mΩ)
● High density cell design for ultra low Rdson ● Fully charac...
