FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK22001
General Features
● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
● High density cell design for ultra low Rdson ● Fully charac...
