1W PACKAGED POWER PHEMT FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz
FPD1500P100
DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm b...
