N-Channel MOSFET. FQP2N60C Datasheet

FQP2N60C Datasheet PDF


Part Number

FQP2N60C

Description

600V N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
Datasheet
Download FQP2N60C Datasheet


FQP2N60C
FQP2N60C / FQPF2N60C
N-Channel QFET® MOSFET
600 V, 2 A, 4.7
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
2 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V,
ID = 1 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP2N60C FQPF2N60C
600
2.0 2.0 *
1.35 1.35 *
8 8*
± 30
120
2.0
5.4
4.5
54 23
0.43 0.18
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP2N60C
2.32
0.5
62.5
FQPF2N60C
5.5
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
1
www.fairchildsemi.com

FQP2N60C
Package Marking and Ordering Information
Part Number
FQP2N60C
FQPF2N60C
Top Mark
FQP2N60C
FQPF2N60C
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
rDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1 A
VDS = 40 V, ID = 1 A
2.0 --
-- 3.6
-- 5.0
4.0
4.7
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 180 235
-- 20 25
-- 4.3 5.6
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25
-- 9 28
-- 25 60
-- 24 58
(Note 4)
--
28
66
VDS = 480 V, ID = 2 A,
-- 8.5 12
VGS = 10 V
-- 1.3
--
(Note 4) --
4.1
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/µs
-- --
2
-- --
8
-- -- 1.4
-- 230
--
-- 1.0
--
A
A
V
ns
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 2 A, di/dt 200 A/µs , VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
2
www.fairchildsemi.com





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