| Part Number | FQU17N08 |
| Manufacturer | Fairchild Semiconductor |
| Title | 80V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a... |
| Features |
• • • • • • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS E... |
| File Size | 595.27KB |
| Datasheet |
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FQU17N08L : FQD17N08L / FQU17N08L December 2000 QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • • 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low.