FSP8N60/FS8N60
600V N-Channel MOSFET
Features
■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to mi...
