MOSFET. FTP04N06NB Datasheet

FTP04N06NB Datasheet PDF


FTP04N06NB
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP04N06NB TO-220
BRAND
IPS
FTP04N06NB
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
3.2mΩ
ID
180A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP04N06NB
VDSS
Drain-to-Source Voltage
60
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
180
116
720
Power Dissipation
PD Derating Factor above 25
245
1.96
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
870
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.51
62.5
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP04N06NB REV. A. Mar 2017


Part FTP04N06NB
Description N-Channel MOSFET
Feature FTP04N06NB; N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP04N06NB Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP04N06NB Datasheet





FTP04N06NB
FTP04N06NB
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 60 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=60V, VGS=0V
TJ=25
VDS=48V, VGS=0V
TJ=100
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 3.2
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
4.0
4
Units
Test Conditions
VGS=10V, ID=90A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 4882
-- 635
-- 342
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
-- 86.2
-- 23.6
-- 29.4
--
--
--
nC ID=90A,VDD=48V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 37.9 --
-- 22.7
-- 68.8
--
--
ns VDD=30V, ID=90A,
VG=10V RG=6Ω
-- 23.5 --
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP04N06NB REV. A. Mar 2017



FTP04N06NB
FTP04N06NB
Source-Drain Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS (Body Diode)
Maximum Pulsed Current
ISM (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width 300μs; duty cycle 2%
Tc=25unless otherwise specified
Min. Typ. Max. Units Test Conditions
-- -- 180 A
-- -- 720 A
TC=25
-- -- 1.2 V ISD=90A, VGS=0V
-- 36 -- ns
IF= IS
-- 40.4 -- nC
di/dt=100A/us
Notes:
*1. Repetitive rating; pulse width limited by maximum junction temperature.
*2. L=0.5mH, ID=59A, Start TJ=25
©2017 InPower Semiconductor Co., Ltd.
Page 3 of 9
FTP04N06NB REV. A. Mar 2017






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