MOSFET. FTP08N06NE Datasheet

FTP08N06NE Datasheet PDF


FTP08N06NE
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP08N06NE TO-220
BRAND
IPS
FTP08N06NE
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
6.5mΩ
IDSilicon
limited current
100A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP08N06NE
VDSS
Drain-to-Source Voltage
60
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
100
60
400
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
347
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP08N06NE Preliminary. Nov. 2017


Part FTP08N06NE
Description N-Channel MOSFET
Feature FTP08N06NE; N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP08N06NE Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP08N06NE Datasheet





FTP08N06NE
FTP08N06NE
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 60 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 500
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=60V, VGS=0V
TJ=25
VDS=48V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 6.5
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
23
Max.
8.5
4
Units
mΩ
Test Conditions
VGS=10V, ID=40A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate Resistance
-- 1.7
--
Ω f=1MHz, VGS=0V,
VDS=0V
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 3348
-- 349
-- 300
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 73
--
-- 16 -- nC ID=50A,VDD=48V
-- 30
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 25.4 --
-- 18
-- 60
--
--
ns
VDD=30V, ID=50A,
VG=10V RG=6
-- 22
--
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP08N06NE Preliminary. Nov. 2017



FTP08N06NE
FTP08N06NE
Source-Drain Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS (Body Diode)
Maximum Pulsed Current
ISM (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width 300μs; duty cycle 2%
Tc=25unless otherwise specified
Min. Typ. Max. Units Test Conditions
-- -- 100 A
-- -- 400 A
TC=25
-- -- 1.2 V ISD=30A, VGS=0V
-- 36 -- ns
IF=20A
-- 55 -- nC
di/dt=100A/us
Notes:
*1. Repetitive rating; pulse width limited by maximum junction temperature.
*2. L=0.5mH, ID=37A, Start TJ=25
©2017 InPower Semiconductor Co., Ltd.
Page 3 of 6
FTP08N06NE Preliminary. Nov. 2017






@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)