Description
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.
General Features
● VDS = 100V,ID = 5A RDS(ON) < 145mΩ @ VGS=10V (Typ:135 mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curr...
