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SiHG20N50C
Vishay Siliconix
Power MOSFET
D TO-247
S
D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg max. (nC) Qgs (nC)
560 VGS = 10 V
76 21
Qgd (nC) Configuration
34 Single
0.270
FEATURES
Low figure-of-merit Ron x Qg 100 % avalanche tested
High peak current capability
dv/dt ruggedness Improve...
