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GA20SICP12-263

GeneSiC

Silicon Carbide Junction Transistor/Schottky Diode

Description
  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low gate charge Advantages  Low switching lo...


GeneSiC

GA20SICP12-263

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