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GB10B60KD TRANSISTOR Datasheet PDFINSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR |
| Part Number | GB10B60KD |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | www. DataSheet4U. com PD - 94382D INSULA TED GATE BIPOLAR TRANSISTOR WITH ULTRAF AST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology . • Low Diode VF. • 10µs Short Cir cuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Charac teristics. • Positive VCE (on) Temper ature Coefficient. G E tsc > 10µs, T J=150°C Benefits • Benchmark Effici ency for Motor Control. • Rugged Tran sient Performance. • Low EMI. • Exc ellent Current Sharing in Parallel Oper ation. n-channel VCE(on) typ. = 1. 8V . |
| Manufacture | International Rectifier |
| Datasheet |
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| Part Number | GB10B60KD |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | www. DataSheet4U. com PD - 94382D INSULA TED GATE BIPOLAR TRANSISTOR WITH ULTRAF AST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology . • Low Diode VF. • 10µs Short Cir cuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Charac teristics. • Positive VCE (on) Temper ature Coefficient. G E tsc > 10µs, T J=150°C Benefits • Benchmark Effici ency for Motor Control. • Rugged Tran sient Performance. • Low EMI. • Exc ellent Current Sharing in Parallel Oper ation. n-channel VCE(on) typ. = 1. 8V . |
| Manufacture | International Rectifier |
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