MOSFET. GSM2307P Datasheet

GSM2307P Datasheet PDF

Part GSM2307P
Description P-Channel MOSFET
Feature GSM2307P 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field eff.
Manufacture Globaltech
Datasheet
Download GSM2307P Datasheet

GSM2307P 20V P-Channel MOSFETs Product Description These P- GSM2307P Datasheet




GSM2307P
GSM2307P
20V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ -20V, -6.5A, RDS(ON)=26m@VGS=-4.5
„ Improved dv/dt capability
„ Fast switching
„ Suit for -1.8V Gate Drive Applications
„ Green Device Available
„ SOT-23-6L package design
Applications
„ Notebook
„ Load Switch
„ Networking
Packages & Pin Assignments
GSM2307PRF (SOT-23-6L)
Top Views
Pin Description
1 Drain
2 Drain
3 Gate
4 Source
5 Drain
6 Drain
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GSM2307P
Ordering Information
Marking Information
Part Number
GSM2307PRF
Package
SOT-23-6L
Part Marking
UYWMM
Quantity
3000pcs
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
-20
±10
-6.5
-4.1
-26
1.56
0.012
-55 to +150
-55 to +150
80
Unit
V
V
A
A
W
W/
/W
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