MOSFET. GSM2354 Datasheet

GSM2354 Datasheet PDF

Part GSM2354
Description N-Channel MOSFET
Feature GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description GSM2354, N-Channel enhancement m.
Manufacture Globaltech
Datasheet
Download GSM2354 Datasheet

GSM2354 100V N-Channel Enhancement Mode MOSFET Product Desc GSM2354 Datasheet




GSM2354
GSM2354
100V N-Channel Enhancement Mode MOSFET
Product Description
GSM2354, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON) ,low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other battery
powered circuits, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Features
„ 100V/3.2A,RDS(ON)=145m@VGS=10V
„ 100V/2.6A,RDS(ON)=160m@VGS=4.5V
„ Super high density cell design for extremely
low RDS (ON)
„ Exceptional on-resistance and maximum DC
current capability
„ SOT-23-3L package design
Applications
„ DC/DC Converters
„ Load Switch
„ LED Backighting in LCD TVs
Packages & Pin Assignments
GSM2354ZF(SOT-23-3L)
Pin Description
1 Gate
2 Source
3 Drain
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GSM2354
Ordering Information
Part Number
GSM2354ZF
Package
SOT-23-3L
Marking Information
54 YW
Part Number
Date Code
Quantity Reel
3000 PCS
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25ºC
TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25ºC
TA=70ºC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
100
±20
3.2
2.6
10
1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
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