MOSFET. GSMBSS123 Datasheet

GSMBSS123 Datasheet PDF

Part GSMBSS123
Description N-Channel MOSFET
Feature GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description The GSMBSS123 is the N-Channel.
Manufacture Globaltech
Datasheet
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GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product De GSMBSS123 Datasheet




GSMBSS123
GSMBSS123
100V N-Channel Enhancement Mode MOSFET
Product Description
The GSMBSS123 is the N-Channel enhancement
mode field effect transistors are produced using
high cell density DMOS technology.
These products have been designed to minimize
on-state resistance while provide rugged, reliable,
and fast switching performance.
Features
„ 100V, 0.17A, RDS(ON)=6.0@VGS=10V
„ SOT-23 package design
„ Lead(Pb)-Free
Applications
„ DC to DC Converter
„ Cellular & PCMCIA Card
„ Cordless Telephone
„ Power Management in Portable and Battery
etc.
Packages & Pin Assignments
GSMBSS123JZF (SOT-23)
Pin Description
1 Gate
2 Source
3 Drain
Ordering Information
GS P/N
GSMBSS123 JZ F
Package Code
Pb Free Code
Part Number
GSMBSS123JZF
Package
SOT-23
Quantity
3000 PCS
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GSMBSS123
Marking Information
Part Number
GSMBSS123JZF
Package
SOT-23
Part Marking
SAT
Absolute Maximum Ratings
(TA=25ºC Unless otherwise noted)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS
VGSM
ID
IDM
PD
Gate-Source Voltage – Continuous
Gate-Source Voltage – Non Repetitive (tp50us)
Continuous Drain Current (TA=25)
Pulsed Drain Current (1)
Power Dissipation (TA=25ºC) (2)
Derate above 25ºC
TJ
TSTG
RθJA
Junction Temperature Range
Storage Temperature Range
Maximum Junction to Ambient
Typical
100
±20
±40
170
680
225
1.8
-55 to 150
-55 to 150
556
Unit
V
V
V
mA
mA
mW
mW/ ºC
ºC
ºC
ºC/ W
Electrical Characteristics
(TA=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gFS
Static
Drain-Source Breakdown Voltage VGS=0V,ID=250uA 100
Gate Threshold Voltage
VDS=VGS,ID=1.0mA 0.8
Gate-Source Leakage Current
VDS=0V,VGS=±20V
Zero Gate Voltage Drain Current
VDS=0V,VGS=100V,
TJ=25 ºC
VDS=0V,VGS=100V,
TJ=125 ºC
Drain-Source On-Resistance
VGS=10V,ID=0.1A
5.0
Forward Trans conductance
VDS=25V,ID=0.1A
8.0
2.8
50
15
60
6.0
Dynamic
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V,VGS=0V,
f=1.0MHz
Crss Reverse Transfer Capacitance
td(on)
td(off)
Turn-On Delay Time
Turn-Off Delay Time
VCC=30V,IC=0.28A,
VGS=10V,RGS=50
VSD Diode Forward On-Voltage
ID=0.34A,VGS=0V
Note 1: Pulse Test : PW300us, Duty Cycle2%.
Note 2: RF-5=1.0x0.75x0.062 in.
20
9.0
4.0
20
40
1.3
Unit
V
nA
uA
ms
pF
ns
V
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