Silicon. GST2SC3356 Datasheet

GST2SC3356 Datasheet PDF

Part GST2SC3356
Description High-Frequency Amplifier Transistor NPN Silicon
Feature GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description This device is desig.
Manufacture Globaltech
Datasheet
Download GST2SC3356 Datasheet

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon GST2SC3356 Datasheet




GST2SC3356
GST2SC3356
High-Frequency Amplifier Transistor NPN Silicon
Product Description
This device is designed as a general purpose
amplifier and switch.
Packages & Pin Assignments
GST2SC3356F(SOT-23)
Features
„ Low noise amplifier at VHF, UHF and CATV
band
„ Low Noise and High Gain
„ High Power Gain
„ Lead(Pb)-Free
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N
GST2SC3356F
Package
SOT-23
Part Marking
2SC3356
Ordering Information
GS P/N
GST2SC3356 F
Part Number
GST2SC3356F
Pb Free Code
Package
SOT-23
Quantity
3000 PCS
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GST2SC3356
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
PD
TJ
TSTG
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
12
20
3
0.1
0.25
150
-55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Conditions
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mA, IB=0mA)
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uA, IE=0mA)
VCE(sat)
Collector-Emitter Breakdown Voltage
(IC=50mA, IB=5mA)
ICBO
Collector Cut-off Current
(VCB=10V, IE=0mA)
IEBO
Emitter Cut-off Current
(VEB=1V,IC=0mA)
hFE
DC Current Gain
(VCE=3V, IC=10mA)
fT
Transition Frequency
(VCE=10V,IC=20mA)
NF
Noise Figure
(VCE=10V,IC=7mA,f=1GHz)
Note 1: Pulse Test: Pulse Width 350 us, Duty Cycle 2.0%
Min Typ Max Unit
12 -
-V
20 - V
- - 200 mV
- - 1 uA
- - 1 uA
82 - 270 -
- 7 - GHz
- - 2 dB
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