Transistors. GSTMMBT5401 Datasheet

GSTMMBT5401 Datasheet PDF

Part GSTMMBT5401
Description High Voltage PNP Transistors
Feature GSTMMBT5401 High Voltage PNP Transistors Product Description This device is designed as a general p.
Manufacture Globaltech
Datasheet
Download GSTMMBT5401 Datasheet

GSTMMBT5401 High Voltage PNP Transistors Product Descriptio GSTMMBT5401 Datasheet




GSTMMBT5401
GSTMMBT5401
High Voltage PNP Transistors
Product Description
This device is designed as a general purpose
amplifier and switch.
Packages & Pin Assignments
GSTMMBT5401F(SOT-23)
Features
„ Collector-Emitter Voltage : -150V
„ Collector-Base Voltage : -160V
„ Collector Current-Continuous : -500mA
„ Lead(Pb)-Free
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N
GSTMMBT5401F
Package
SOT-23
Part Marking
2L
Ordering Information
GS P/N
GSTMMBT5401 F
Pb Free Code
Part Number
GSTMMBT5401F
Package
SOT-23
Quantity
3000 PCS
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GSTMMBT5401
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
VCBO
VEBO
IC(DC)
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation FR-5 Board (1)
TA=25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate(2)
PD TA=25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Note 1: FR-5=1.0 x 0.75 x 0.062 in
Note 2: Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
Conditions
Collector-Emitter Breakdown Voltage (3)
(IC=-1.0mA, IB=0mA)
Collector-Base Breakdown Voltage
(IC=-100uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=-10uA, IC=0mA)
Collector Cutoff Current
(VCE=-120V, IE=0mA)
DC Current Gain (IC=-1.0mA, VCE=-5.0V)
hFE DC Current Gain (IC=-10mA, VCE=-5.0V)
VCE(sat)
VBE(sat)
fT
Cobo
hfe
NF
DC Current Gain (IC=-50mA, VCE=-5.0V)
Collector-Emitter Saturation Voltage
(IC=-10mA, IB=-1.0mA)
(IC=-50mA, IB=-5.0mA)
Base-Emitter Saturation Voltage
(IC=-10mA, IB=-1.0mA)
(IC=-50mA, IB=-5.0mA)
Current-Gain-Bandwidth Product (4)
(IC=-10mA, VCE=-10V, f=100MHz)
Output Capacitance
(VCB=-10V, IE=0mA, f=1.0MHz)
Small-Signal Current Gain
(IC=-1.0mA, VCE=-10V, f=1.0 kHz)
Noise Figure
(IC=-200μA, VCE=-5V, RS=10Ω, f=1.0kHz)
Value
-150
-160
-5.0
-500
225
1.8
556
300
2.4
417
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Min
-150
-160
-5.0
-
50
60
50
-
-
-
-
100
-
40
-
Max
-
-
-
-50
-
240
-
-0.2
-0.5
-1.0
-1.0
300
6.0
200
8.0
Unit
V
V
V
uA
-
-
-
V
V
MHz
pF
-
dB
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