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H01N45A

HI-SINCERITY
Part Number H01N45A
Manufacturer HI-SINCERITY
Description N-Channel Power Field Effect Transistor
Published Apr 30, 2019
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor Features • Typical RDS(on)=4.1Ω • E...
Datasheet PDF File H01N45A PDF File

H01N45A
H01N45A

Overview
HI-SINCERITY MICROELECTRONICS CORP.
H01N45A N-Channel Power Field Effect Transistor Features • Typical RDS(on)=4.
1Ω • Extremely High dv/dt Capability • 100% Avalanche Tested • Gate Charge Minimized • New High Voltage Benchmark Applications • Switch Mode Low Power Supplies (SMPS) • Low Power, Low Cost CFL (Compact Fluorescent Lamps) • Low Power Battery Chargers Absolute Maximum Ratings Symbol VDS VDGR VGS ID ID IDM PD dv/dt Tj, Tstg IAR EAS Parameter Drain-Source Voltage (VGS=0) Drain-Gate Voltage (RGS=20KΩ) Gate-Source Voltage Drain Current (Continuous) at TC=25oC Drain Current (Continuous) at TC=100oC Drain Current (Pulsed) Total Power Dissipation at TC=25oC Derate Factor Peak Diode re...


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