H02N60S Datasheet (data sheet) PDF





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H02N60S Datasheet - N-Channel Power Field Effect Transistor

H02N60S   H02N60S  

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HI-SINCERITY MICROELECTRONICS CORP. Spe c. No. : MOS200504 Issued Date : 2005.0 5.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without deg ratding performance over time. In addit ion, this advanced MOSFET is

Manufacture Part Number Description

HI-SINCERITY

H02N60S

N-Channel Power Field Effect Transistor




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