HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5
H05N60 Series
N-Channel Power Field Effect Transistor
Description
This advanced high voltageMOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-...