H20R1202 Datasheet | Infineon Technologies





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H20R1202 Datasheet PDF

Part Number H20R1202
Description Reverse Conducting IGBT
Manufacture Infineon Technologies
Total Page 12 Pages
PDF Download Download H20R1202 Datasheet

Features: Datasheet pdf IHW20N120R2 Soft Switching Series www.D ataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • Trench Stop and Fieldstop technology for 1200 V applications offers : - very tight pa rameter distribution - high ruggedness, temperature stable behavior • NPT te chnology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for ta rget applications • Pb-free lead plat ing; RoHS compliant • Complete produc t spectrum and PSpice Models : http://w ww.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching A pplications Type IHW20N120R2 Maximum Ra tings Parameter Collector-emitter volta ge DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp li mited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed.

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H20R1202 Datasheet
Soft Switching Series
IHW20N120R2www.DataSheet4U.com
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW20N120R2
1200V 20A
1.55V
175°C H20R1202 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1200
40
20
60
60
40
20
30
50
130
120
±20
±25
330
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.2 July 06

H20R1202 Datasheet
Soft Switching Series
IHW20N120R2www.DataSheet4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.45
0.45
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=20A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=20A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.5mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.55
1.75
1.85
1.45
1.6
1.65
5.8
-
-
-
14.5
none
Unit
max.
-V
1.75
-
-
1.7
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 1.2 July 06




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