| Part Number | H5N2004DS |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Title | Silicon N Channel MOS FET High Speed Power Switching |
| Description | H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features... |
| Features |
www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A) • Avalanche ratings Outlin... |
| Published | Nov 20, 2008 |
| Datasheet |
 H5N2004DS PDF File
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