| Part Number | H5N2503P |
| Manufacturer | Renesas Technology |
| Title | Silicon N Channel MOS FET High Speed Power Switching |
| Description | H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features www.DataSh... |
| Features |
www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) • Avalanche ratings Ou... |
| File Size | 121.46KB |
| Datasheet |
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