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H5N2509P

Part Number	H5N2509P
Manufacturer	Renesas
Description	Silicon N Channel MOS FET
Published	Apr 8, 2016
Datasheet	H5N2509P PDF File

Features

• Low on-resistance: R DS (on) = 0.053 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) 
• High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) 
• Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = ...

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