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HAT2265H
Silicon N Channel Power MOS FET Power Switching
Rev.0.00 Sept.2004
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Lead Free
Outline
LFPAK
5
5 D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5 Drain
S S S 1 2 3
Rev.0...
