HAT2279H
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5
1 234
4 G
SSS 123
REJ03G1464-0200 Rev.2.00
Jul 0...
