HCS60R350T Super Junction MOSFET
Jan 2016
HCS60R350T
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 11 0.35 17.5
Unit V A ȍ nC
Application
Switch Mode Power ...
