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Hitachi Semiconductor
Hitachi Semiconductor
HE8812SG GaAlAs Infrared Emitting Diode


HE8812SG
GaAlAs Infrared Emitting Diode

ODE-208-1000A (Z) Rev.1 Jan. 2003 Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. I
HE8812SG pdf




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