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HFC1N80

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N-Channel MOSFET

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HFC1N80 Jan 2007 HFC1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 0.6 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 7.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ...


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HFC1N80

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