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HFH13N80
N-Channel MOSFET
Description
HFH13N80 Dec 2005 HFH13N80 800V N-Channel
MOSFET
BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 68 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
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