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HFS10N65U
N-Channel MOSFET
Description
HFS10N65U HFS10N65U 650V N-Channel
MOSFET
FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7\S#9GS=10V 100% Avalanche Tested Oct 2...
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