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HG2N60
N-Channel Mosfet Transistor
Description
INCHANGE Semiconductor isc N-Channel
Mosfet
Transistor ·FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source
Voltage
- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·High efficiency switch mode power supply. Charger UPS power supply. ·ABSOLUTE M...
Inchange Semiconductor
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