UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
63 A, 600 V
HGTG30N60C3D
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage d...
