| Part Number | HM2312 |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev... |
| Features |
● VDS = 20V,ID = 4.5A RDS(ON) 40mΩ @ VGS=2.5V RDS(ON) 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram 2312 Marking and pin assignment Application ●Battery protection ●Load switch ●Power management SOT-... |
| File Size | 453.94KB |
| Datasheet |
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