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HM2341

H&M Semiconductor

P-Channel Enhancement Mode Power MOSFET


Description
HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS...



H&M Semiconductor

HM2341

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