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HM4N10PR

H&M Semiconductor
Part Number HM4N10PR
Manufacturer H&M Semiconductor
Title N-Channel Enhancement Mode Power MOSFET
Description The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app...
Features
● VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched a...

Published Nov 27, 2018
Datasheet PDF File HM4N10PR PDF File

HM4N10PR
HM4N10PR


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