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HN2D01F

Toshiba Semiconductor

Diode

Description
HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.  Low forward voltage : VF (3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic...


Toshiba Semiconductor

HN2D01F

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