| Part Number | HN2S01F |
| Manufacturer | Toshiba |
| Title | Silicon Epitaxial Schottky Barrier Type Diode |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is compose... |
| Features |
ture/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and es... |
| File Size | 227.17KB |
| Datasheet |
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