TRANSISTOR. HSB562 Datasheet

HSB562 Datasheet PDF

Part HSB562
Description PNP EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6513 Issue.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSB562 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSB562 PNP EPITAXIAL PLA HSB562 Datasheet




HSB562
HI-SINCERITY
MICROELECTRONICS CORP.
HSB562
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6513
Issued Date : 1993.01.15
Revised Date : 2005.02.14
Page No. : 1/5
Description
The HSB562 is designed for general purpose low frequency power amplifier
applications.
Absolute Maximum Ratings
TO-92
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 900 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .......................................................................................................................... -25 V
VCEO Collector to Emitter Voltage ....................................................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current ............................................................................................................................................. -1 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min. Typ. Max.
-25 -
-
-20 -
-
-5 -
-
- - -1
- - -500
- - -1
85 - 240
- 350 -
- 38 -
Classification Of hFE
Rank
Range
B
85-170
Unit
V
V
V
uA
mV
V
MHz
pF
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-800mA, IB=-80mA
IC=-500mA, VCE=-2V
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
C
120-240
HSB562
HSMC Product Specification



HSB562
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6513
Issued Date : 1993.01.15
Revised Date : 2005.02.14
Page No. : 2/5
Current Gain & Collector Current
1000
Saturation Voltage & Collector Current
1000
VCE=2 V
100
10
0.1
1 10 100
Collector Current (mA)
1000
10000
On Voltage & Collector Current
100
VCE(sat) @ IC=30IB
VCE(sat) @ IC=10IB
10
0.1
1 10 100
Collector Current (mA)
1000
10000
Cutoff Frequency & Collector Current
1000
1000
VBE(on) @ VCE=2V
100
100
0.1
1
10
100
1000
10000
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
1000
100
Cob
10
1
0.1
HSB562
1 10
Reverse Biased Voltage (V)
100
10
1
10000
1000
100
10
1
1
VCE=2V
10 100
Collector Current (mA)
Safe Operating Area
1000
PT=1ms
PT=100ms
PT=1s
10
Forward Voltage-VCE (V)
100
HSMC Product Specification




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