Mixer. HSM276SR Datasheet

HSM276SR Datasheet PDF

Part HSM276SR
Description Silicon Schottky Barrier Diode for Balanced Mixer
Feature HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D (Z) Rev. 4 Aug. 1994 Featur.
Manufacture Hitachi Semiconductor
Datasheet
Download HSM276SR Datasheet

HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer HSM276SR Datasheet




HSM276SR
HSM276SR
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-040D (Z)
Rev. 4
Aug. 1994
Features
High forward current, Low capacitance.
HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM276SR
Laser Mark
C9
Package Code
MPAK
Pin Arrangement
3
21
(Top View) 1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average forward current
Junction temperature
Storage temperature
Note: Per one device
Symbol
VR
IO*
Tj
Tstg
Value
3
30
125
–55 to +125
Unit
V
mA
°C
°C



HSM276SR
HSM276SR
Electrical Characteristics (Ta = 25°C)*1
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
Reverse current
Forward current
Capacitance
Capacitance deviation
ESD Capability
VR
IR
IF
C
C
3.0 —
——
35 —
——
——
30 —
—V
50 µA
— mA
0.90 pF
0.10 pF
—V
IR = 1mA
VR = 0.5V
VF = 0.5V
VR = 0.5V, f = 1MHz
VR = 0.5V, f = 1MHz
*2C = 200pF, Both forward and
reverse direction 1 pulse
Notes: 1. Per one device
2. Failure Criterrion; IR 100µA at VR = 0.5V
10–1
10–2
10–3
10–4
10–5
0
0.2 0.4 0.6 0.8
Forward voltage VF (V)
1.0
Fig.1 Forward current Vs. Forward voltage
2




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