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HVL147M
Silicon Epitaxial Trench Pin Diode
Description
HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Informat...
Renesas Technology
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HVL147
Silicon Epitaxial Trench Pin Diode
- Renesas Technology
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