MOSFET. ICE20N170 Datasheet

ICE20N170 Datasheet PDF


Part Number

ICE20N170

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE20N170 Datasheet PDF


ICE20N170 Datasheet
Preliminary Data Sheet
ICE20N170
ICE20N170 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
20A
600V
0.17Ω
62nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=10A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=20A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
20
62
520
20
50
±20
±30
180
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-20N170-000-5
05/15/2013
Free Datasheet http://www.datasheet41u.com/

ICE20N170 Datasheet
Preliminary Data Sheet
ICE20N170
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 0.7
oC/W
- - 62
- - 260 oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=600V, VGS=0V,
Tj=25oC
VDS=600V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=10A,
Tj=25oC
VGS=10V, ID=10A,
Tj=150oC
600
2.1
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
640 -
3 3.9
0.1 1
- 100
- 100
0.17 0.199
0.52 -
4.3 -
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=10A
VDS=380V, VGS=10V,
ID=20A, RG=4(External)
-
-
-
-
-
-
-
-
2020
980
9
19
39
3.5
55
7
-
-
-
-
-
-
-
-
pF
S
ns
SP-20N170-000-5
05/15/2013
Free Datasheet http://www.datasheet42u.com/


Features Datasheet pdf Preliminary Data Sheet ICE20N170 ICE20N 170 N-Channel Enhancement Mode MOSFET F eatures • Low rDS(on) • Ultra Low G ate Charge • High dv/dt capability High Unclamped Inductive Switching (U IS) capability • High peak current ca pability • Increased transconductance performance • Optimized design for h igh performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FRE E TA=25oC ID=250uA VGS=10V VDS=480V D 20A 600V 0.17Ω 62nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PAT ENTS FOR SUPERJUNCTION MOSFETS. THE MAJ ORITY OF THESE PATENTS HAVE 17 to 20 YE ARS OF REMAINING LIFE. THIS PORTFOLIO H AS GRANTED PATENTS ISSUED IN USA, CHINA , KOREA, JAPAN, TAIWAN & EUROPE. Stand ard Metal Heatsink 1=Gate, 2=Drain, 3=S ource. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuou s drain current Pulsed drain current Av alanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=10A 20 62.
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